The a-Si:H thin films were deposited by PECVD and then were annealed in RTA furnace.The microstructure of thin films was investigated by XRD and Raman specra.

 
  • 摘要采用等離子體增強化學(xué)氣相沉積法(PECVD)沉積非晶硅薄膜,然后在快速熱退火爐中進(jìn)行退火。
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