The X ray Photoelectron Spectroscopy (XPS) has been used for the element qualitation,quantitation,chemical state analysis and depth profile of InGaAsP/InP MOCVD film.

 
  • 采用X射線(xiàn)光電子能譜(XPS)對InGaAsP/InP異質(zhì)結構MOCVD外延晶片作了表面薄層元素、組分定性、定量和深度分布分析。
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