The CeO 2 films were deposited by pulsed laser ablation on hastelloy substrates at room temperature with the Ar + ion beam assistance.

 
  • 室溫下在 Ni Cr合金 ( Hastelloy c-2 75)基底上應用 Ar+ 離子源輔助 ;準分子脈沖激光沉積了Ce O2 薄膜 .
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