The 7.4% speed enhancement is achieved for the 250 nm node ring oscillator under uniaxial tensile strain for mutually perpendicular layout of the NFET and the PFET.

 
  • 對于250奈米制程,經(jīng)實(shí)驗量測,以平行于n型金氧半場(chǎng)效電晶體之單軸張力,對n型與p型金氧半場(chǎng)效電晶體通道互相垂直之環(huán)型振蕩器可有7.;4%25的速度增加。
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