Suitable polycrystalline ZnS x Se 1- x film with (111) preferential growth orientation that provided a good matching with the requirements of LCLV were deposited on ITO coated glass by molecular beam epitaxy (MBE).
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美
- 采用分子束外延技術(shù)在ITO導電玻璃上制備了具有 (111)面定向生長(cháng)結構的ZnSxSe1-x多晶薄膜 ,通過(guò)控制反應時(shí)的生長(cháng)參數 ,制備出了符合器件設計要求的光敏層薄膜。
