Simulation and experiments show that for point array or hole array patterns with the same sizes maskless interference photolithography is much simple than the traditional photolithography.

 
  • 模擬和實(shí)驗結果表明,對點(diǎn)陣或孔陣圖形,在同樣的圖形尺度下,無(wú)掩模干涉光刻比傳統光刻簡(jiǎn)單得多。
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