Silicon oxide has been used as a gate dielectric of MOSFETs for more than forty years since MOSFET had been introduced due to its excellent stability, uniformity, and easy fabrication process.
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美
- 自從金氧半導體場(chǎng)效電晶體被發(fā)明以來(lái)，二氧化矽巳經(jīng)被用作為其閘極氧化層超過(guò)四十年之久，因為二氧化矽擁有極佳的穩定性和均勻度且制作過(guò)程較為簡(jiǎn)單。
