Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiation-hardening, no parasitic capacitance and latch-up effect.
英
美
- 絕緣體上生長(cháng)的薄單晶硅膜(SOI)具有良好的橫向絕緣、抗輻照、無(wú)鎖存效應和無(wú)寄生電容,并能有效地提高硅集成電路的速度和集成度,在深亞微米VLSI技術(shù)中,具有很大的優(yōu)勢和潛力。