SiC thin films of large area were prepared successfully in a plasma-enchanced CVD reactor at room temperature, with silane and ethene used as raw materials and Ar as carrier gas.

 
  • 采用射頻等離子體增強的氣相沉積法,以硅烷和乙烯為原料,在常溫下成功的合成了碳化硅薄膜。
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