Si?3N?4 has a higher dielectric constant, k, than that of SiO?2. New model and material parameters were added to 2?D device simulator PISCES?II.

 
  • 使用Si3N4材料作為柵介質(zhì),利用其介電常數高于SiO2的特性,可以在一定時(shí)期內有效地解決隧穿電流的問(wèn)題。
今日熱詞
目錄 附錄 查詞歷史
国内精品美女A∨在线播放xuan