Secondly, properties of the diffusion barrier (TaNx) on the Cu/ TaNx/ CoSi2/p+n junctions will be studied by changing the thickness of the diffusion barrier layer and the passivation layer to find the optimum fabrication condition.

 
  • 其次,本計畫(huà)第二年將研究銅金屬化與矽化鈷接觸接面之整合,如阻障層厚度之調整以控制阻障特性與階梯覆蓋性之最佳化等研究。
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