Secondly, SE trajectories are calculated with a given residual surface potential model to clarify the micromechanism of the homogenization process.

 
  • 其次,在一個(gè)假設的殘留表面電位分布下計算了二次電子軌跡,給出了殘留表面電位均勻化過(guò)程的微觀(guān)機制。
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