您要查找的是不是：
- As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基勢壘二極管為例，應用該方法，實(shí)現了高接觸勢壘情形下的正反向電流模擬。
- The electron beam induced current (EBIC) character of palladium silicide-silicon (P-type)Schottky Barrier Diode (SBD) is observed. 本文用EBIC法對SBD元件進(jìn)行了觀(guān)測。
- In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技術(shù)采用低導通電阻的MOS管代替導通壓降相對較大的快恢復二極管或肖特基二極管,大大減小了輸出整流損耗,效率相對提高。
- The interface property of palladium silicide-silicon (P-type) Schottky Barrier Diode (SBD)has been studied by AES spectrum and EBIC image. The thickness of Pd_x Si_y layer and the deepness of schottky "junction" are estimated. 對硅化鈀-P型硅肖特基勢壘二極管(SBD)的界面性質(zhì)作了AES譜和EBIC像分析,估算了Pd_xSi_y層厚度和肖特基結的結深。
- Pt-GaAs Schottky barrier APDs have been investigated. Pt-GaAs肖特基勢壘雪崩光電探測器已研制成功。
- Preparation of ZnO Thin Film Schottky Barrier Diode ZnO薄膜肖特基二極管的研制
- Schottky barrier double rectifier diode 蕭特基勢壘雙整流二極管
- 8mm GaAs Beam Lead Schottky Barrier Mixer Diode 八毫米GaAs梁式引線(xiàn)肖特基勢壘混頻管
- SiC-Based Schottky Barrier Diode SiC肖特基勢壘二極管
- Schottky barrier diode rectifier 肖特基勢壘二極管整流器
- The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低電阻率的優(yōu)點(diǎn) ,采用 Ti制作肖特基二極管。
- The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. 研究了n型Au/GaN肖特基勢壘紫外光探測器的電子輻照失效機理。
- Yet another object is to form a Schottky barrier between a semiconducting material and an active electrode. 還有另一個(gè)目的是在半導體材料與有源電極之間形成肖特基勢壘。
- When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 當我們在矽基板上形成矽化鎳時(shí)，將會(huì )有蕭特基接面存在其間。
- Analysis of Transit Angle of DDR IMPATT Diode 雙漂移崩越二極管的渡越角分析
- When the Schottky barrier height(Eb)is higher than 0.6 eV,any increase in Eb can result in apparent reduction in the DSSC maximum power output. 當TiO2/TCO的肖特基勢壘(Eb)大于0.;6eV時(shí);DSSC的最大功率輸出值隨Eb的增大而明顯降低。
- double drift region IMPATT diode 雙漂移區碰撞雪崩渡越時(shí)間二極管
- The typical structure and fabrication technology of the iridium silicide Schottky barrier infrared detectors(IrSi-SBIRDs)are discussd. 本文討論了硅化銥肖特基勢壘紅外探測器(IrSi-SBIRD)的典型結構和其制作技術(shù);
- The mean Schottky barrier height and lowest ideality factor were found to be 1.24eV and 1.03, respectively, as measured by (I - V). 電流 -電壓測量得到肖特基勢壘平均高度和理想因子分別為 1 .;2 4 e V、1
- Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二極管D1和D2，而不是普通二極管，為的是減少總線(xiàn)上低狀態(tài)電壓，改進(jìn)噪聲極限。
