Photoluminescence spectra and photoluminescence excitation spectra for the light emission of around 2.25 eV from undoped and C doped GaN films grown by HVPE are measured.

 
  • 測量了氫化物氣相外延方法生長(cháng)的非特意摻雜和摻碳GaN外延膜的光致發(fā)光譜 ;并在光致發(fā)光譜峰位2 .;2 5eV(5 5 0nm)附近分別測量了光致發(fā)光激發(fā)譜;對兩者進(jìn)行了比較
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