PECVD deposited SiO2 can lead to a critical hydration effect such that the gate voltage drift of a PECVD SiO2-gate ISFET is obvious relative to other ISFETs with sensing layers of different materials.是什么意思_PECVD deposited SiO2 can lead to a critical hydration effect such that the gate voltage drift of a PECVD SiO2-gate ISFET is obvious relative to other ISFETs with sensing layers of different materials.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句