It is found that the sputtering yield of kinetic impaction is increased by HCIs and the potential sputtering (PS) could be induced by impaction of HCIs.

 
  • 實(shí)驗結果表明高電荷態(tài)離子能夠增加動(dòng)能濺射;同時(shí)高電荷態(tài)離子入射能夠引起勢能濺射。
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