It is also found that High C/F atom ratio for source gases, low deposition pressure and high microwave input power contribute to enhancement of cross-linked structure in a-C:F:H films and thus improve the thermal stability of the films.
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美
- 實(shí)驗中還發(fā)現,源氣體較高的碳氟原子比、較低的沉積氣壓和較高的微波輸入功率有助于a-C:F:H薄膜交聯(lián)結構的增強,因而有利于改善薄膜的熱穩定性。