In view of its virtue of high degree of electron and ion generations, hot wire assisted hot wire assisted the microwave electron cyclotron resonance (MWECR) CVD is expected to deposit device quality a-Si:H at high deposition rate.
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- 熱絲輔助微波電子回旋共振化學(xué)氣相沉積(MWECR CVD)方法具有電子和離子產(chǎn)生率高等優(yōu)點(diǎn),能在較高的沉積速率下獲得器件級質(zhì)量的a-Si:H 薄膜。
