In the procedure used in the paper a reliable depth profile of nitrogen in TiN_x/ TiSi_x bilayer structure can be obtained, The results on interaction of Ti/Si and Ti/SiO_2/Si during RTA in N_2 and Ar ambient have also been presented.

 
  • 本文采用窄能量窗口選擇和譜圖疊減處理法精確的分析了TiN_X/TiSi_X雙層結構中N的深度分布,同時(shí)給出了有關(guān)Ti/Si,Ti/SoO_2/Si在快速熱退火后界面反應和產(chǎn)物的結果。
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