In the measurement with duration of 6 hours, the hydration depth of a PECVD SiO2 layer was about 500?? and the maximum gate voltage drift of a PECVD SiO2-gate ISFET was 81mV.是什么意思_In the measurement with duration of 6 hours, the hydration depth of a PECVD SiO2 layer was about 500?? and the maximum gate voltage drift of a PECVD SiO2-gate ISFET was 81mV.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句