In the deep submicrometer design, with the increase of metal layer and the reduced width of line, the circuit performance and density have been improved greatly.

 
  • 摘要集成電路設計進(jìn)入了超深亞微米領(lǐng)域,金屬層增加,線(xiàn)寬減小,使電路的性能和密度都得到了很大的提高,但也引入了愈來(lái)愈嚴重的互連線(xiàn)效應,并最終引發(fā)了信號完整性問(wèn)題。
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