In n-MOSFET, we found the worst case stress condition occurred under Vg=peak Isub at operating voltage, and interface traps are primary damage in n-MOSFET.

 
  • 熱載子效應的實(shí)驗結果發(fā)現元件的最快加速退化情況為閘極偏壓在最大基極電流時(shí),而介面缺陷為最主要的影響機制。
今日熱詞
目錄 附錄 查詞歷史
国内精品美女A∨在线播放xuan