H- passivating Si surface has been achieved by using chemical method, and the nanometer-scale line structure with 5Onm on Si surface has been made by using STM selective oxidation and chemical etch.是什么意思_H- passivating Si surface has been achieved by using chemical method, and the nanometer-scale line structure with 5Onm on Si surface has been made by using STM selective oxidation and chemical etch.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句