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- Indium Arsenide Infrared Detector 砷化銦紅外探測器
- Diffused red, gallium arsenide phosphide red. 功能應用: Discrete LED indicator.
- Scientists have also developed a promising hybrid approach to producing a silicon-based laser that relies on adding a piece of gallium arsenide or indium phosphide to the top of a silicon substrate. 科學(xué)家還開(kāi)發(fā)出一種復合方法，在矽基質(zhì)加上一層砷化鎵或磷化銦，制作出矽雷射裝置。
- Indium,boron and gallium are used in making solar cells. 銦，鎵，硼，應用到太陽(yáng)能電池中。
- indium arsenide 砷化銦
- indium arsenide detector 砷化銦探測器
- indium arsenide photodiode 砷化銦光電二極管
- Common lasing media such as gallium arsenide, in comparison, feature emission efficiencies some 10,000 times larger. 相比之下，砷化鎵等常用雷射材料的發(fā)光效率則是矽的一萬(wàn)倍。
- This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 因此本論文研究在槽線(xiàn)架構下，不同饋入方式在頻率響應上的影響。
- The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS). 目前為止，光電薄膜最有效的材質(zhì)是銅銦硒化鎵（CIGS）。
- Global Solar uses a technology known as copper indium gallium selenide (CIGS) to make its thin-film solar cells. 全球太陽(yáng)能利用技術(shù)稱(chēng)為銅銦鎵硒（ CIGS ）將其薄膜太陽(yáng)能電池。
- To produce the electron beam, a laser will fire at a target made of gallium arsenide, knocking off billions of electrons with each pulse. 產(chǎn)生電子射束的方法，是利用一道雷射轟擊用砷化鎵制成的標靶，每個(gè)脈沖會(huì )打出幾十億個(gè)電子。
- The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制備出高電阻率的復合型半絕緣砷化鎵。
- The high cost of indium is a consideration. 銦的高成本是一個(gè)需要考慮的問(wèn)題。
- In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it. 用自制的無(wú)機高分子聚合硅酸鐵(PFSS),對砷化鎵生產(chǎn)中的含砷廢水進(jìn)行了混凝處理。
- Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate. 砷化鎵晶片生產(chǎn)過(guò)程中 ,產(chǎn)生大量廢水 ,其中主要污染物是懸浮狀態(tài)的砷化鎵微粒。
- New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips. 為像含有種種要素數層的金家砷化物和金家鋁砷化物這樣的集成電路的新基礎材料,可能成為較快速的薯條因素。
- Belcher is trying to get her phage to attach to safer particles made of gallium nitride, indium nitride or some other semiconductor. 貝契想在她的噬菌體上連接其他較安全的粒子，如氮化鎵、氮化銦或其他半導體。
- Single crystal gallium arsenide wafers are for applications that are extensively used in the opto-electronics and microelectronics industries. 公司注冊地址在北京經(jīng)濟技術(shù)開(kāi)發(fā)區，總占地面積24000平方米，注冊資金1500萬(wàn)美元，總投資金額4500萬(wàn)美元。
- The study progress and research trend at present on the complex of scattered elements involving gallium, indium and thallium have been described. 概述了稀散元素鎵、銦和鉈配合物的研究進(jìn)展和目前研究動(dòng)向.
