For the purpose of reducing off-state current, lightly doped drain(LDD) structures were used in a p-Si TFT LCD.

 
  • 針對多晶硅薄膜晶體管液晶顯示器件關(guān)態(tài)漏電流較大的問(wèn)題 ,采用源漏輕摻雜結構以降低關(guān)態(tài)時(shí)電荷的泄漏 ,增加晶體管的開(kāi)關(guān)電流比值。
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