For VLSI, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see Section 9. 2. 4) or by using planarization.

 
  • 對于超大規模集成電路的平面狀表面;可以用偏置濺射淀積法的層間介質(zhì)淀積(見(jiàn)9.;2
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