Epitaxial 4H-SiC grown on AlN/Si(100) complex substrate by chemical vapor deposition(CVD) at the relatively low temperature was investigated.

 
  • 本工作用化學(xué)氣相淀積方法在A(yíng) lN/S i(100)復合襯底上生長(cháng)S iC薄膜。
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