Due to the probability of carrier in zero dimension being smaller than that in three dimension, the dephasing time in Ge quantum dots is lightly longer than that in bulk Si. 3.

 
  • 由于載流子在零維空間受到的散射幾率比三維空間小,故Ge量子點(diǎn)的退相時(shí)間比Si的帶間躍遷的退相時(shí)間要長(cháng)一些。
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