By using the mc-Si cut from the central position with low contamination level, the intrinsic recombination activity of various GBs was found to be EBIC-inactive at 300 K.

 
  • EBSD分析mc-Si中晶界類(lèi)型發(fā)現,mc-Si中90%25以上的晶界是大角度晶界。
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