By using basic physical equation of semiconductor,such as Poisson equation,a new method to establish an exact on-resistance model based on the physical structure of VDMOS device was given.

 
  • 導通電阻是衡量VDMOS器件性能的重要參數之一,是高開(kāi)關(guān)效率,低功耗VDMOS器件的主要設計指標。
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