By 150 W CW CO2 laser beam irradiation, the elimination of the oxidation stacking faults in silicon has been observed and its mechanism is discussed.

 
  • 用150瓦連續波CO_2激光束照射硅片,觀(guān)察到了其氧化層錯的消除現象,并對消除機理進(jìn)行了探討。
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