Based on the theory analysis of photocurrent distribution in the base region of color sensor, it can be found that the impurity concentration and the junction depth arc the main factors.

 
  • 在對器件基區中光生電流分布規律進(jìn)行理論分析的基礎上,得出硅雙結型色敏器件中摻雜濃度和兩個(gè)結的結深是影響光譜響應范圍的主要因素。
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