Abstract: The radiation-induced interface traps on BF+2 implanted Si-gate PMOSFET are measured using the subthreshold method.是什么意思_Abstract: The radiation-induced interface traps on BF+2 implanted Si-gate PMOSFET are measured using the subthreshold method.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句