Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI.

 
  • 摘要: 用低介電常數介質(zhì)薄膜作金屬線(xiàn)間和層間介質(zhì)可以降低超大規模集成電路(ULSI) 的互連延遲、串擾和能耗。
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