Abstract The radiation induced interface traps on BF + 2 implanted Si gate PMOSFET are measured using the subthreshold method.是什么意思_Abstract The radiation induced interface traps on BF + 2 implanted Si gate PMOSFET are measured using the subthreshold method.在線(xiàn)翻譯_英語(yǔ)_讀音_用法_例句