The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices.

 
  • 采用二維模擬軟件Medici對以ZrO:為柵介質(zhì)的體硅MOS器件和501 MOS器件的性能進(jìn)行了模擬。 系統模擬了以ZrO:為柵介質(zhì)的體硅MOS器件和常規MOS器件性能對比,以及ZrO:為柵介質(zhì)的501 MOS器件的性能與常規501 MOS器件性能的對比。
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